Plenary and Invited Speakers

Plenary Speakers

Michael Kneissl   TU Berlin, Germany Prospects and challenges for AlGaN-based deep UV LED technologies
Zlatko Sitar NCSU, USA & Nagoya Univ., Japan Recent breakthroughs in AlGaN-based UV light emitters

Keynote Speakers

Debdeep Jena Cornell Univ., USA Tunnel junctions in nitride semiconductors and their heterostructures
Zetian Mi Michigan Univ., USA AlGaN nanowire LEDs and laser diodes operating in the UV-C band
Leo Schowalter Crystal IS, USA Development of AlN single crystal substrates and AlGaN/GaN technology for UVC optoelectronic applications
Yasufumi Takagi Hamamatsu Photonics, Japan Ultraviolet laser diodes: Recent progress and applications

Invited Speakers

Yasuhiko Arakawa The Univ. Tokyo, Japan Single photon emission from III-nitride quantum dots
Frank Bertram Univ. of Magdeburg, Germany Characterization of UV-emitting nanostructures using ultra-high-resolution STEM-CL
Matthias Bickermann IKZ Berlin, Germany Status and challenges of AlN bulk crystal growth for use as substrates in deep-UV emitters
Guillaume Cassabois Univ. de Montpellier, France Optical properties of isotopically-purified hexagonal boron nitride
Shanshan Chen Renmin Univ. of China, China Controlled growth of h-BN and graphene/h-BN heterostructures by chemical vapor deposition
Yonghoon Cho KAIST, Korea Ultraviolet emitters and exciton-polaritons from GaN nanostructures
Ramon Collazo NCSU, USA Growth related methods for point defect control in AlGaN
Mary Crawford SANDIA Lab, USA Properties of hexagonal BN grown by high temperature metal-organic vapor phase epitaxy
Theeradetch Detchprohm Georgia Institute of Technology, USA MOCVD growth and characterization of III-N ultraviolet vertical-cavity surface emitting lasers and avalanche photodiodes
Bernard Gil Univ. de Montpellier, France Optical properties of h-BN: demonstration of the indirect nature of the bandgap
Akira Hirano UV Craftory Co. Ltd., Japan AlGaN-based deep-ultraviolet LED with high wall-plug efficiency incorporating uneven quantum well and future prospects
Motoaki  Iwaya Meijo Univ., Japan Electron beam excitation of UV laser using a GaN/AlGaN multi quantum well active layer
Hongxing Jiang Texas Tech Univ., USA Hexagonal boron nitride epilayers for UV photonics
Alexy Kavokin University of Southampton, UK The origin of laser-induced subwavelength nanopores in silica glass
Yoichi Kawakami Kyoto Univ., Japan Clarifying carrier recombination processes in AlGaN-based materials towards efficient DUV emitters
Xiaohang Li KAUST, Saudi Arabia Latest progress on B-III-N alloy & impact of TMA preflow on AlN MOVPE
Hai Lu Nanjing University, China High performance UV photodetectors based on wide bandgap semiconductors

Hideto Miyake

Mie Univ., Japan Fabrication of high-quality AlN template by high-temperature annealing for deep-ultraviolet optical devices
Takashi Taniguchi NIMS, Japan High pressure synthesis of cubic and hexagonal boron nitride single crystals and their impurity control
Carol Trager-Cowan Univ. of Strathclyde, UK Nanocharacterisation of the structural and luminescence properties of UV light-emitting materials in the scanning electron microscope
Chris Van de Walle UCSB, USA First-principles modeling of ultra-wide-band-gap nitrides
Tim Wernicke TU Berlin, Germany From step flow to quantum dots: Morphology of AlN, AlGaN and GaN on AlN and its effect on device properties
Yoichi Yamada Yamaguchi Univ., Japan DUV spectroscopy of dense excitons in AlGaN-based quantum wells
Euijoon Yoon Seoul National Univ., Korea Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
Tongjun Yu Peking Univ., China Optical polarization and light extraction properties of AlGaN-based DUV LEDs